FJV3104RMTF

FJV3104RMTF

$0.17
  • Description:TRANS PREBIAS NPN 50V SOT23-3
  • Series:-

SKU:e98b4927c59b Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V SOT23-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):47 kOhms
  • Resistor - Emitter Base (R2):47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:250 MHz
  • Power - Max:200 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3

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FJV3104RMTF

Overview

The FJV3104RMTF is an NPN epitaxial silicon transistor with built-in bias resistors, packaged in a surface-mount SOT-23-3 configuration. It features a collector-emitter voltage of 50 V and a continuous collector current capability of 100 mA. The device integrates two 47 kΩ resistors (R1 and R2) with a typical ratio of 1.0. Key electrical characteristics include a minimum DC current gain of 68 at 5 mA, a saturation voltage of 0.3 V at 10 mA, and a maximum power dissipation of 200 mW. The junction-to-ambient thermal resistance is 625 °C/W, supporting operation up to a junction temperature of 150 °C.

Feature Summary

  • Integrates dual bias resistors to reduce component count and simplify circuit design
  • Provides high-speed switching performance with a current gain bandwidth product of 250 MHz
  • Offers low saturation voltage for efficient digital logic interfacing
  • Designed for space-constrained applications through compact SOT-23 packaging

Applications

  • Switching circuits
  • Interface and driver circuits
  • Inverters
  • Digital applications in industrial segments

Procurement Notes

Verify the specific suffix 'MTF' corresponds to the tape and reel packing method required for your assembly line. Confirm that the part number aligns with ON Semiconductor's updated nomenclature following the Fairchild integration, as underscore characters may have been replaced by dashes in official ordering systems. Ensure compliance with RoHS standards if applicable to your manufacturing requirements.

Selection Notes

Select this component when a single NPN transistor with integrated base and emitter resistors is needed to drive loads or interface logic levels. The 47 kΩ resistor values are suitable for standard TTL and CMOS inputs. Consider the 200 mW power dissipation limit and thermal resistance when designing for ambient temperatures exceeding 25 °C to ensure reliable operation within the specified junction temperature range.

Part Context

This device belongs to the FJV series of pre-biased transistors manufactured by ON Semiconductor. It represents a consolidation of discrete bipolar transistors and external biasing networks into a single package. The FJV3104RMTF variant specifically utilizes the SOT-23 form factor, distinguishing it from larger packages like TO-92 or other surface-mount options within the broader family.

Replacement Considerations

Check for equivalents such as the FJV3104R (without MTF suffix) which shares identical electrical specifications but may differ in packaging format. Verify pinout compatibility and resistor values when substituting with parts from other manufacturers offering similar pre-biased NPN configurations.

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