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The FJV3105RMTF is an NPN epitaxial silicon pre-biased transistor manufactured by Fairchild Semiconductor. It integrates a single NPN transistor with built-in bias resistors, specifically R1 at 4.7 kΩ and R2 at 10 kΩ, to simplify circuit design. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. It features a DC current gain (hFE) ranging from a minimum of 30 to a maximum of 30 under specified conditions. Packaged in a compact SOT-23-3 surface-mount case with a height of 0.93 mm, it operates within a temperature range up to +150°C.
Verify the manufacturer designation carefully, as Fairchild Semiconductor has been integrated into onsemi. Ensure the specific part number matches the required resistor values and polarity. Confirm RoHS compliance status and lead-free availability through official distributor channels prior to ordering, as manufacturing sources may vary due to corporate integration.
Select this component when a compact NPN solution with predefined biasing is required. The 4.7 kΩ input resistor and 10 kΩ base-emitter resistor are fixed; verify these values against the target circuit's drive requirements. Compare hFE limits and thermal characteristics against alternative pre-biased transistors if different resistance ratios or higher current capabilities are needed.
This component belongs to the FJV series of pre-biased bipolar transistors designed for space-constrained designs. It serves as a discrete alternative to complex bias networks, offering a consolidated solution for logic interfacing. The device is part of Fairchild's portfolio of small-signal transistors optimized for cost-effective mass production in consumer and industrial electronics.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with equivalent pre-biased NPN transistors having similar VCEO ratings and integrated resistor values before substitution.