FJV3106RMTF

Overview

The FJV3106RMTF is an NPN epitaxial silicon digital transistor manufactured by onsemi. It integrates bias resistors (R1=10 kΩ, R2=47 kΩ) within a compact SOT-23 package. Key electrical parameters include a collector-emitter voltage of 50 V, a collector current of 100 mA, and a power dissipation of 200 mW at 25°C. The device features a DC current gain of 68, a saturation voltage of 0.3 V, and a transition frequency of 250 MHz.

Feature Summary

• Built-in bias resistor network for simplified circuit design
• High-speed switching capability with 250 MHz transition frequency
• Low saturation voltage for efficient signal processing

Applications

• Switching circuits
• Inverter applications
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific suffix 'MTF' against official documentation to confirm tape-and-reel packaging details. Confirm RoHS compliance status and ensure the component matches the active or obsolete lifecycle stage indicated in the datasheet before procurement.

Selection Notes

Select this component for low-voltage switching tasks requiring integrated base drive. Ensure the required collector current remains below 100 mA and the operating voltage does not exceed 50 V. Verify that the SOT-23 package dimensions fit the target PCB layout constraints.

Part Context

This part belongs to the FJV3106R series of NPN digital transistors. It serves as a complement to the PNP FJV4106R model, allowing for complementary push-pull configurations in driver and interface applications while maintaining consistent internal resistor ratios.

Replacement Considerations

Check for direct pin-compatible replacements from other manufacturers offering identical 10k/47k resistor networks and matching SOT-23 footprints. Verify equivalent breakdown voltages and current ratings to ensure functional parity.