FJV3107RMTF

Overview

The FJV3107RMTF is an NPN epitaxial silicon digital transistor with built-in bias resistors, manufactured by onsemi. It operates with a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. The device features a typical input resistor (R1) of 22 kΩ and a resistor ratio (R1/R2) of 0.47. Key electrical characteristics include a DC current gain (hFE) minimum of 68 at 5 mA, a saturation voltage of 0.3 V at 10 mA, and a current gain bandwidth product of 250 MHz. Power dissipation is rated at 200 mW, with an operating temperature range from -55 °C to +150 °C.

Feature Summary

• Integrated bias network consisting of R1 and R2 for simplified circuit design
• High-speed switching capability supported by a 250 MHz bandwidth product
• Low saturation voltage for efficient signal transmission

Applications

• Switching circuits
• Inverter applications
• Interface circuits
• Driver circuits

Procurement Notes

Verify the component status carefully before procurement as this part number may be discontinued or obsolete. Confirm that the specific ordering suffix matches the required packaging format. Ensure compatibility with existing designs given potential lifecycle changes.

Selection Notes

Select this component when a single NPN digital transistor with a 22 kΩ base resistor is required. Verify that the 50 V voltage rating and 100 mA current capacity meet the load requirements. Consider the SOT-23 package dimensions for board layout constraints.

Part Context

This component belongs to the FJV series of pre-biased transistors. It serves as a complement to other variants in the family, such as the PNP type FJV4107R. The device integrates standard discrete transistor functionality with internal biasing resistors to reduce external component count.

Replacement Considerations

The datasheet identifies the FJV4107R as a complementary device within the same product family.