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The FJV3108RMTF is an NPN epitaxial silicon digital transistor manufactured by onsemi, formerly Fairchild Semiconductor. It integrates a single NPN transistor with built-in bias resistors (R1=47kΩ, R2=22kΩ) in a compact SOT-23 surface-mount package. The device supports a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. Key electrical characteristics include a DC current gain (hFE) of 56 at IC=5mA, a saturation voltage of 0.3V at IC=10mA, and a transition frequency of 250MHz. The component operates within a junction temperature range up to 150°C.
Verify the specific ordering suffix 'MTF' against official documentation to confirm tape-and-reel packaging specifications. Confirm RoHS compliance status as datasheets may vary by revision. Check for obsolescence notices from onsemi, as this component originates from Fairchild Semiconductor's legacy portfolio. Ensure supply chain authenticity through authorized distributors.
Select the FJV3108RMTF when an NPN digital transistor with a 47kΩ input resistor is required. Compare hFE and VCE(sat) requirements against load conditions. Consider the complementary PNP variant FJV4108R for push-pull configurations. Verify thermal derating curves if operating near maximum ambient temperatures or power dissipation limits.
This component belongs to the FJV310xR series of pre-biased bipolar transistors. It serves as a complement to the PNP type FJV4108R. The part represents a standard discrete solution for replacing multiple external components in logic interface and switching roles. Manufacturing history traces back to Fairchild Semiconductor before corporate restructuring.
Direct substitutes include the FJV3108RLIMTF. Evaluate pin-compatible alternatives from other manufacturers only if electrical parameters match exactly. Verify that replacement parts maintain the same resistor ratio and breakdown voltages.