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The FJV3109R is an NPN epitaxial silicon transistor manufactured by onsemi (formerly Fairchild Semiconductor). It belongs to the digital transistor category, featuring a built-in bias resistor with a typical value of 4.7 kΩ. The device is housed in a surface-mount SOT-23 package. Key electrical specifications include a collector-emitter voltage rating of 40 V and a continuous collector current capacity of 100 mA. The component offers a DC current gain range from 100 to 600 at a collector current of 1 mA. Additional characteristics include a collector-base breakdown voltage of 40 V, a saturation voltage of 0.3 V at 10 mA, and a transition frequency of 250 MHz.
Verify the specific manufacturer source, as the component was originally produced by Fairchild Semiconductor before its acquisition by onsemi. Confirm that the part number matches the exact datasheet revision referenced. Ensure compliance with RoHS directives if required for the target application. Check for any lifecycle status updates regarding discontinuation or obsolescence.
Select this component when a compact NPN digital transistor with a 4.7 kΩ internal resistor is required. Ensure the operating voltage does not exceed the 40 V collector-emitter limit. Verify that the 100 mA current rating meets the load requirements. Consider the SOT-23 footprint constraints during PCB layout planning.
This component is part of the FJV310xR series of pre-biased transistors. It serves as the NPN counterpart to the PNP FJV4109R. The series is designed to replace discrete resistor-transistor networks, reducing board space and assembly complexity in low-power switching applications.
The FJV4109R is documented as the complementary PNP device within the same series. Other NPN digital transistors with similar voltage ratings and integrated resistors may be considered, provided pinout compatibility and electrical parameters align with the original design requirements.