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The FJV3110RMTF-ON is a single NPN digital transistor manufactured by onsemi, housed in an SOT-23-3 surface-mount package. It features a collector-emitter maximum voltage of 40 V and a continuous collector current rating of 100 mA. The device includes a typical input resistor of 10 kOhms with a typical resistor ratio of 1. Key electrical parameters include a minimum DC collector/base gain (hfe) of 100 and an emitter-base voltage of 5 V. Power dissipation is rated at 200 mW, with an operating temperature range spanning from -55 C to +150 C.
Verify end-of-life status before finalizing designs, as this component may be subject to obsolescence. Confirm RoHS compliance documentation availability through official manufacturer channels. Ensure that the specific suffix matches the required tape-and-reel or cut-tape configuration for your manufacturing line. Cross-reference datasheet revisions to guarantee parameter consistency during long-term production runs.
Select this part when a 40 V breakdown voltage and 100 mA current capacity are sufficient for the application. The 10 kOhm input resistor value suits standard logic levels without excessive power consumption. Consider thermal management requirements given the 200 mW power dissipation limit in the small SOT-23-3 package. Evaluate alternative pin-compatible devices if higher voltage ratings or different resistor values are needed.
This component belongs to the FJV3110R series of pre-biased transistors from onsemi. It shares the same functional architecture as other members in the family but differs in internal resistor values and voltage ratings. The SOT-23-3 form factor is common across many small-signal transistor families, allowing for standardized footprint design in multi-component boards.
Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with any potential replacements by matching the SOT-23-3 package, NPN polarity, 40 V VCEO rating, and 10 kOhm input resistance specifications.