FJV3110RMTF

Overview

The FJV3110RMTF is a single NPN digital transistor manufactured by onsemi, housed in an SOT-23-3 surface-mount package. It features a typical input resistance of 10 kOhms and supports a collector-emitter voltage (VCEO) of 40 V with a continuous collector current of 100 mA. The device has a power dissipation rating of 200 mW and a minimum DC current gain (hFE) of 100. Operating temperatures range from -55°C to +150°C, with an emitter-base voltage (VEBO) of 5 V.

Feature Summary

• Integrates internal biasing resistors to simplify circuit design and reduce component count.
• Provides high current gain for efficient switching applications in compact packages.

Applications

• General-purpose switching circuits
• Driver stages for low-power loads
• Logic level translation interfaces

Procurement Notes

Verify end-of-life status before integration, as the component is marked as obsolete. Confirm RoHS compliance details through official datasheets. Ensure supply chain stability due to discontinuation risks. Validate pinout compatibility with existing PCB footprints. Check for available last-time buy options if production continuity is required.

Selection Notes

Select this part for applications requiring a pre-biased NPN transistor with 40 V breakdown. The 10 kOhm input resistor suits standard logic drive levels. Consider thermal limits given the 200 mW dissipation in small packages. Compare against newer equivalents if long-term availability is critical. Verify hFE requirements meet minimum gain specifications.

Part Context

This component belongs to the FJV3110R series of digital transistors. It represents a specific variant within onsemi's portfolio of pre-biased bipolar junction transistors designed for space-constrained designs.

Replacement Considerations

Check for direct cross-references from other manufacturers offering identical electrical characteristics and pinouts. Verify package dimensions match SOT-23-3 standards. Ensure substitute parts maintain similar input resistance values.