FJV3111RMTF

FJV3111RMTF

  • Description:TRANS PREBIAS NPN 40V SOT23-3
  • Series:-

SKU:ba7446ffd06f Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 40V SOT23-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Resistors Included:R1 Only
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):40 V
  • Resistor - Base (R1):22 kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:250 MHz
  • Power - Max:200 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3

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FJV3111RMTF

Overview

The FJV3111RMTF is an NPN epitaxial silicon digital transistor manufactured by onsemi, housed in a SOT-23-3 surface-mount package. It integrates a built-in bias resistor with a typical value of 22 kΩ. The device supports a collector-emitter voltage (VCEO) of 40 V and a continuous collector current (IC) of 100 mA. Key electrical characteristics include a DC current gain (hFE) ranging from 100 to 600 at IC=1mA, a collector-base breakdown voltage (BVCBO) of 40 V, and a transition frequency (fT) of 250 MHz. Power dissipation is rated at 200 mW, with an operating temperature range spanning -55°C to +150°C.

Feature Summary

  • Integrates a single NPN transistor with a built-in 22 kΩ bias resistor for simplified circuit design.
  • Provides high-speed switching capabilities with a transition frequency of 250 MHz.
  • Features a compact SOT-23-3 footprint suitable for space-constrained applications.

Applications

  • Switching circuits
  • Inverter logic gates
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the specific manufacturer origin, as the component history involves Fairchild Semiconductor and subsequent acquisitions by onsemi. Confirm RoHS compliance status through official documentation, as legacy production data may vary. Ensure the ordering suffix matches the required tape-and-reel packaging specifications for automated assembly processes.

Selection Notes

Select this component when a pre-biased NPN switch is required with a 22 kΩ input resistance. Compare against the FJV3110RMTF if a 10 kΩ input resistor is preferred instead. Verify that the 40 V voltage rating and 100 mA current capacity align with the load requirements. Consider the complementary PNP device, FJV4111R, for push-pull configurations.

Part Context

This part belongs to the FJV311xR series of digital transistors designed for general-purpose switching. It serves as the NPN counterpart to the FJV4111R PNP device. The series is characterized by low power consumption and small package size, making it suitable for portable electronics and signal processing interfaces where board space is limited.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Cross-reference with other NPN digital transistors featuring a 22 kΩ internal resistor and SOT-23-3 packaging if direct replacement is necessary.

FJV3111RMTFFJV3111RMTF

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