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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 40V SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- Resistors Included：R1 Only
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：40 V
- Resistor - Base (R1)：47 kOhms
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：250 MHz
- Power - Max：200 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3
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Overview
The FJV3112RMTF is an NPN epitaxial silicon transistor with a built-in bias resistor, manufactured by onsemi. It operates with a collector-emitter voltage of 40 V and a continuous collector current of 100 mA. The device features a typical input resistance of 47 kΩ, with options for 32 kΩ and 62 kΩ variants. Key electrical characteristics include a DC current gain (hFE) ranging from 100 to 600 at 1 mA, a saturation voltage of 0.3 V at 10 mA, and a transition frequency of 250 MHz. Packaged in SOT-23, it supports junction temperatures up to 150 °C.
Feature Summary
- Integrated bias resistor simplifies circuit design by eliminating external base resistors.
- High current gain ensures efficient switching performance in digital applications.
- Compact SOT-23 package facilitates surface-mount assembly.
Applications
- Switching circuits
- Inverter applications
- Interface circuits
- Driver circuits
Procurement Notes
Verify the specific suffix 'MTF' against official documentation to confirm tape-and-reel packaging details. Ensure the component matches the original Fairchild Semiconductor specifications now managed by onsemi. Cross-reference datasheet revision dates to confirm parameter consistency before integration into production designs.
Selection Notes
Select this component when a pre-biased NPN transistor is required for low-power switching tasks. The 47 kΩ internal resistor value suits standard logic interface levels. Compare hFE ranges and breakdown voltages against alternative models like the FJV4112R complement to ensure compatibility with existing circuit topologies and thermal constraints.
Part Context
This part belongs to the family of pre-biased transistors designed for simplified switching applications. Originally produced by Fairchild Semiconductor, the product line continues under onsemi. The FJV3112R serves as the NPN counterpart to the PNP FJV4112R, offering complementary functionality within the same package footprint and electrical profile.
Replacement Considerations
Public confirmed substitute part numbers: FJV4112R (complementary PNP type). Verify pinout compatibility and electrical ratings before substitution.
FAQ
What is the typical value of the built-in bias resistor?
The typical input resistance value is 47 kΩ, though 32 kΩ and 62 kΩ variants are also available.
What is the maximum collector-emitter voltage rating?
The maximum collector-emitter voltage (VCEO) is rated at 40 V.
Is this transistor suitable for high-frequency applications?
Yes, it has a transition frequency (fT) of 250 MHz, making it suitable for moderate-speed switching applications.
