FJV3113RMTF-ON

FJV3113RMTF-ON

$0.03
  • Description:TRANS PREBIAS NPN 50V SOT23-3
  • Series:-

SKU:fe31e04ddd1b Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V SOT23-3
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):2.2 kOhms
  • Resistor - Emitter Base (R2):47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:250 MHz
  • Power - Max:200 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3

Download product information

FJV3113RMTF-ON

Overview

The FJV3113RMTF-ON is a single NPN pre-biased digital transistor from onsemi, housed in an SOT-23-3 surface-mount package. It features a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. The device includes an integrated base resistor network with a typical input resistance of 22 kOhms and a typical resistor ratio of 1. Key electrical parameters include a minimum DC current gain (hFE) of 56, an emitter-base voltage (VEBO) of 10 V, and a power dissipation rating of 200 mW. The component operates within a temperature range of -55°C to +150°C.

Feature Summary

  • Integrates an NPN bipolar junction transistor with a built-in base biasing resistor network for simplified circuit design.
  • Provides high-speed switching capabilities suitable for digital logic interfacing and signal processing applications.
  • Offers robust thermal performance with a wide operating temperature range and low power dissipation requirements.

Applications

  • General-purpose switching circuits
  • Driver stages for small-signal loads
  • Logic level translation interfaces

Procurement Notes

Verify the specific suffix and manufacturer designation carefully, as availability may vary across distributors. Confirm RoHS compliance status directly with the supplier or official documentation prior to ordering. Ensure that the procurement channel provides valid traceability for this component type.

Selection Notes

Select this component when a compact NPN solution with integrated base biasing is required for space-constrained designs. Consider the 50 V voltage rating and 100 mA current limit against load requirements. Evaluate the 22 kOhm input resistance value for compatibility with driving source impedance levels.

Part Context

This part belongs to the FJV series of pre-biased transistors manufactured by onsemi. These devices combine discrete transistor functionality with internal resistive networks to reduce external component count. The SOT-23-3 packaging ensures compatibility with standard surface-mount assembly processes used in consumer and industrial electronics.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical specifications if considering alternative manufacturers. Consult official obsolescence notices for lifecycle management strategies.

FJV3113RMTF-ONFJV3113RMTF-ON
$0.03
Buy Now