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The FJV3113RMTF-ON is a single NPN pre-biased digital transistor from onsemi, housed in an SOT-23-3 surface-mount package. It features a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. The device includes an integrated base resistor network with a typical input resistance of 22 kOhms and a typical resistor ratio of 1. Key electrical parameters include a minimum DC current gain (hFE) of 56, an emitter-base voltage (VEBO) of 10 V, and a power dissipation rating of 200 mW. The component operates within a temperature range of -55°C to +150°C.
Verify the specific suffix and manufacturer designation carefully, as availability may vary across distributors. Confirm RoHS compliance status directly with the supplier or official documentation prior to ordering. Ensure that the procurement channel provides valid traceability for this component type.
Select this component when a compact NPN solution with integrated base biasing is required for space-constrained designs. Consider the 50 V voltage rating and 100 mA current limit against load requirements. Evaluate the 22 kOhm input resistance value for compatibility with driving source impedance levels.
This part belongs to the FJV series of pre-biased transistors manufactured by onsemi. These devices combine discrete transistor functionality with internal resistive networks to reduce external component count. The SOT-23-3 packaging ensures compatibility with standard surface-mount assembly processes used in consumer and industrial electronics.
Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical specifications if considering alternative manufacturers. Consult official obsolescence notices for lifecycle management strategies.