SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FJV3113RMTF is a pre-biased NPN bipolar transistor manufactured by Fairchild Semiconductor. It integrates an internal base resistor network within a compact SOT-23-3 surface-mount package. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current rating of 100 mA. The device features a typical input resistor value of 47 kOhms with a typical resistor ratio of 4.7. It supports a maximum operating temperature of +150°C and offers a DC current gain (hFE) range from 30 to 300.
Verify the specific suffix and manufacturer documentation to confirm exact resistor values and hFE bins, as variations exist within the product family. Ensure compliance with RoHS directives if required by the target application. Cross-reference datasheets from authorized distributors to validate lead times and availability status before finalizing procurement plans.
Select this component when a single NPN transistor with high-value base biasing is needed for space-constrained designs. Compare the 47 kOhm input resistance against other variants like the FJV3105RMTF or FJV3103RMTF to ensure compatibility with the driving source impedance. Verify that the 50 V voltage rating meets the system's peak transient requirements.
This part belongs to the Fairchild FJV series of pre-biased transistors, which combine NPN or PNP junctions with built-in resistors. These devices are designed to replace discrete transistor-resistor combinations, offering improved reliability and reduced footprint in portable and industrial electronic equipment.
Direct substitutes may include other Fairchild pre-biased NPN transistors with similar 50V ratings and SOT-23-3 packages, such as the FJV3105RMTF or FJV3103RMTF, provided their specific resistor values match the circuit design requirements.