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The FJV3114RMTF is a single NPN epitaxial silicon digital transistor manufactured by onsemi. It features a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. The device includes an integrated base resistor with a typical value of 47 kOhms and a resistance ratio of 1. It operates within a temperature range of -55°C to +150°C, with a power dissipation rating of 200 mW. The component is housed in a surface-mount SOT-23-3 package.
Verify component availability status as the manufacturer indicates this part is obsolete and scheduled for discontinuation. Confirm end-of-life notifications and production cessation timelines directly with onsemi or authorized distributors before finalizing procurement plans. Ensure supply chain continuity strategies are in place due to limited remaining stock and potential manufacturing phase-out constraints.
Select this component when a pre-biased NPN switch with a 47 kOhm base resistor is required. Ensure the application voltage does not exceed 50 V and current remains within 100 mA limits. Consider the SOT-23-3 footprint compatibility during PCB layout. Evaluate thermal management requirements given the 200 mW power dissipation capability and wide operating temperature range.
This component belongs to the FJV3114R series of pre-biased transistors from onsemi. It represents a standard commercial grade discrete semiconductor solution designed for general-purpose switching and amplification tasks. The product line emphasizes integration of biasing resistors to reduce external component count and simplify assembly processes in consumer and industrial electronics.
MMUN2233LT1G is a confirmed direct substitute available from onsemi. Verify pinout compatibility and electrical parameter alignment before implementation.
The device marking code is R34.
The typical input resistance is 47 kOhms.