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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：2.2 kOhms
- Resistor - Emitter Base (R2)：10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：33 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：250 MHz
- Power - Max：200 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3
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Overview
The FJV3115RMTF is an NPN epitaxial silicon transistor with built-in bias resistors, manufactured by onsemi. It features a collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. The device integrates a base resistor (R1) of 2.2 kΩ and an emitter-base resistor (R2) of 10 kΩ. Electrical characteristics include a DC current gain (hFE) minimum of 33 at IC = 10 mA, a saturation voltage (VCE(sat)) of 0.3 V max, and a transition frequency (fT) of 250 MHz. Power dissipation is rated at 200 mW with a thermal resistance (RθJA) of 625 °C/W. The component is housed in a surface-mount SOT-23 package.
Feature Summary
- Integrates bias resistors to reduce component count and simplify circuit design
- Provides high output current capability for switching applications
- Offers low saturation voltage for efficient digital operation
Applications
- Switching circuits
- Interface and driver circuits
- Inverters
- Digital applications in industrial segments
Procurement Notes
Verify the exact part number suffix against the manufacturer's official ordering guide, as Fairchild Semiconductor nomenclature was updated during integration with ON Semiconductor. Confirm RoHS compliance status and check for any specific environmental declarations or PCN notices related to the manufacturing site before finalizing procurement plans.
Selection Notes
Select this component when a compact NPN solution with integrated biasing is required for space-constrained designs. Ensure the 50 V collector-emitter rating and 100 mA current capacity align with the target application load. Verify that the 2.2 kΩ input resistor value provides the appropriate drive current for the intended logic interface levels.
Part Context
This device belongs to the FJV3115R series of pre-biased transistors originally developed by Fairchild Semiconductor. Following the corporate merger, the product line is now managed under the ON Semiconductor brand. The 'MTF' suffix specifically denotes the SOT-23 tape and reel packaging configuration used for automated surface-mount assembly processes.
Replacement Considerations
Direct substitutes within the same family include the FJV3110RMTF and FJV3105RMTF, which share identical pinouts and packages but differ in internal resistor values.
