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The FJV4103RMTF is a single PNP epitaxial silicon digital transistor manufactured by onsemi. It integrates an NPN transistor with internal biasing resistors in a compact SOT-23-3 surface-mount package. The device features a maximum collector-emitter voltage (VCEO) of 50 V and supports a continuous collector current of 100 mA. Key electrical parameters include a typical base resistor value of 22 kOhms, a minimum DC current gain (hFE) of 56, and a power dissipation rating of 200 mW. It operates within a temperature range of -55°C to +150°C.
Verify component authenticity through authorized distribution channels. Confirm that the specific suffix matches the required PNP configuration and packaging format. Review the manufacturer's end-of-life status documentation prior to finalizing procurement plans to ensure long-term supply chain stability.
Select this component when a pre-biased PNP solution is required to reduce external component count. Ensure the 50 V voltage rating and 100 mA current capacity meet the target load requirements. Verify that the SOT-23-3 footprint aligns with the existing PCB layout constraints.
This part belongs to the FJV series of pre-biased bipolar transistors from onsemi. These devices are designed to replace discrete resistor-transistor networks, offering improved consistency and reduced assembly time compared to standard discrete components.
Consult official cross-reference data for direct substitutes. Verify pinout compatibility and electrical parameter equivalence before implementing any alternative component.