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The FJV4104RMTF is a PNP digital transistor manufactured by onsemi, designed for surface-mount applications in the SOT-23-3 package. It integrates a bias resistor network with an epitaxial silicon PNP transistor to simplify circuit design. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. The device features a typical input resistance of 47 kOhms and a DC current gain (hFE) minimum of 56. Power dissipation is rated at 200 mW, with an operating temperature range from -55°C to +150°C.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status via official datasheets. Check for end-of-life notices or obsolescence warnings prior to procurement. Ensure storage conditions adhere to moisture sensitivity levels specified in the packaging data sheet.
Select this component when a PNP digital transistor with 50 V rating and 100 mA current capacity is required. The 47 kOhm input resistance suits applications needing specific base drive characteristics. Compare against similar series parts like FJV4107R if different resistance ratios are needed. Ensure the SOT-23-3 footprint matches the target PCB design constraints.
This part belongs to the FJV410xR series of pre-biased transistors from onsemi. These devices are engineered to replace discrete resistor-transistor combinations, offering improved performance consistency and reduced assembly complexity. The series is commonly used in general-purpose analog and digital switching applications across various industrial and consumer sectors.
Publicly confirmed substitute part numbers for FJV4104RMTF were not identified in available documentation. Verify pinout compatibility and electrical specifications before considering alternative manufacturers' equivalents.