FJV4105RMTF

FJV4105RMTF

  • Description:TRANS PREBIAS PNP 50V SOT23-3
  • Series:-

SKU:ed05c8091d96 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V SOT23-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):4.7 kOhms
  • Resistor - Emitter Base (R2):10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:200 MHz
  • Power - Max:200 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3

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FJV4105RMTF

Overview

The FJV4105RMTF is a pre-biased NPN digital transistor manufactured by onsemi, housed in an SOT-23-3 surface-mount package. It integrates a single NPN epitaxial silicon transistor with internal biasing resistors to simplify circuit design and reduce component count. The device features a collector-emitter voltage rating of 50 V and a continuous collector current capacity of 100 mA. Typical internal resistor values include a base resistor of 4.7 kΩ and an emitter resistor of 10 kΩ, providing a typical resistance ratio of 0.47. The unit supports a maximum operating temperature of +150°C and a minimum of -55°C, with a power dissipation rating of 200 mW.

Feature Summary

  • Integrates NPN transistor with dual biasing resistors for simplified switching applications
  • Eliminates external resistor requirements to reduce printed circuit board space
  • Provides high DC current gain for efficient signal amplification and logic interfacing

Applications

  • General-purpose switching circuits
  • Driver circuits for low-power loads
  • Logic level translation interfaces

Procurement Notes

Verify the specific suffix configuration against official datasheets to ensure correct resistor values and electrical characteristics. Confirm RoHS compliance status and environmental declarations prior to integration. Check for obsolescence notices or end-of-life announcements from the manufacturer to assess long-term supply viability for production planning.

Selection Notes

Select this component when a compact NPN switching solution with integrated biasing is required. Ensure the 50 V collector-emitter voltage and 100 mA current limits exceed the application's peak demands. Verify that the SOT-23-3 package dimensions fit the available footprint and that the thermal dissipation capabilities meet the system's power constraints under expected operating conditions.

Part Context

This part belongs to the FJV series of pre-biased transistors from onsemi, designed to replace discrete resistor-transistor networks. It serves as a direct functional replacement for similar devices from other manufacturers offering identical pinouts and electrical specifications within the SOT-23-3 form factor, facilitating cross-brand sourcing strategies.

Replacement Considerations

Equivalent parts include the FJV4105RMTF_NL alias. Cross-reference with other manufacturers' NPN pre-biased transistors featuring 50V/100mA ratings and 4.7kΩ/10kΩ internal resistors in SOT-23-3 packages to identify compatible alternatives.

FJV4105RMTFFJV4105RMTF

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