FJV4106RMTF

FJV4106RMTF

  • Description:TRANS PREBIAS PNP 50V SOT23-3
  • Series:-

SKU:242547bf729c Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V SOT23-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):10 kOhms
  • Resistor - Emitter Base (R2):47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:200 MHz
  • Power - Max:200 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3

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FJV4106RMTF

Overview

The FJV4106RMTF is a PNP epitaxial silicon transistor manufactured by onsemi, formerly Fairchild Semiconductor. It features an integrated bias resistor network with R1 at 10 kΩ and R2 at 47 kΩ. The device operates with a collector-emitter voltage of -50 V and a maximum collector current of -100 mA. Key electrical characteristics include a DC current gain (hFE) of 68 at -5 mA, a saturation voltage of -0.3 V at -10 mA, and a transition frequency of 200 MHz. It is housed in a compact SOT-23 surface-mount package.

Feature Summary

  • Integrated bias resistor network for simplified circuit design
  • High-speed switching capability with 200 MHz transition frequency
  • Low saturation voltage for efficient power dissipation
  • Complementary to the NPN FJV3106R series

Applications

  • Switching circuits
  • Inverter applications
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the component authenticity by checking the marking code against the official datasheet specifications. Confirm that the ordering suffix matches the required tape and reel packaging configuration. Ensure the revision level aligns with your design requirements before finalizing procurement orders.

Selection Notes

Select this component when a PNP transistor with built-in bias resistors is required to reduce external component count. It serves as a direct complement to the NPN FJV3106R for push-pull configurations. Verify that the -50 V rating and -100 mA current limits meet the specific load requirements of the target application.

Part Context

This part belongs to the Fairchild Semiconductor Bipolar Transistors product line. It is designed specifically for high-speed switching applications where space constraints necessitate the use of the SOT-23 package. The integrated resistor network distinguishes it from standard discrete transistors.

Replacement Considerations

The FJV3106R is its complementary NPN counterpart. Direct replacements should be verified against the absolute maximum ratings and pinout configuration to ensure compatibility with existing PCB layouts and circuit designs.

FAQ

What are the values of the internal bias resistors?

The internal bias network consists of R1 at 10 kΩ and R2 at 47 kΩ.

What is the maximum collector current rating?

The maximum continuous collector current (IC) is rated at -100 mA.

Is this transistor suitable for high-frequency applications?

Yes, it has a current gain bandwidth product (fT) of 200 MHz, making it suitable for high-speed switching.

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