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The FJV4106RMTF is a PNP epitaxial silicon transistor manufactured by onsemi, formerly Fairchild Semiconductor. It features an integrated bias resistor network with R1 at 10 kΩ and R2 at 47 kΩ. The device operates with a collector-emitter voltage of -50 V and a maximum collector current of -100 mA. Key electrical characteristics include a DC current gain (hFE) of 68 at -5 mA, a saturation voltage of -0.3 V at -10 mA, and a transition frequency of 200 MHz. It is housed in a compact SOT-23 surface-mount package.
Verify the component authenticity by checking the marking code against the official datasheet specifications. Confirm that the ordering suffix matches the required tape and reel packaging configuration. Ensure the revision level aligns with your design requirements before finalizing procurement orders.
Select this component when a PNP transistor with built-in bias resistors is required to reduce external component count. It serves as a direct complement to the NPN FJV3106R for push-pull configurations. Verify that the -50 V rating and -100 mA current limits meet the specific load requirements of the target application.
This part belongs to the Fairchild Semiconductor Bipolar Transistors product line. It is designed specifically for high-speed switching applications where space constraints necessitate the use of the SOT-23 package. The integrated resistor network distinguishes it from standard discrete transistors.
The FJV3106R is its complementary NPN counterpart. Direct replacements should be verified against the absolute maximum ratings and pinout configuration to ensure compatibility with existing PCB layouts and circuit designs.
The internal bias network consists of R1 at 10 kΩ and R2 at 47 kΩ.
The maximum continuous collector current (IC) is rated at -100 mA.
Yes, it has a current gain bandwidth product (fT) of 200 MHz, making it suitable for high-speed switching.