FJV4107RMTF

FJV4107RMTF

  • Description:TRANS PREBIAS PNP 50V SOT23-3
  • Series:-

SKU:fbe950f42b38 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V SOT23-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):22 kOhms
  • Resistor - Emitter Base (R2):47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:200 MHz
  • Power - Max:200 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3

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FJV4107RMTF

Overview

The FJV4107RMTF is a PNP epitaxial silicon transistor with built-in bias resistors, housed in an SOT-23 surface-mount package. It features a collector-emitter voltage of -50 V and a continuous collector current of -100 mA. The device integrates a base resistor (R1) of 22 kΩ and an emitter-base resistor (R2) of 47 kΩ, yielding a typical resistor ratio of 0.47. Key electrical characteristics include a DC current gain (hFE) of 68 at -5 mA, a saturation voltage of -0.3 V at -10 mA, and a transition frequency of 200 MHz. Maximum power dissipation is rated at 200 mW.

Feature Summary

  • Integrated dual-resistor network for simplified switching circuit design
  • High-speed operation capability with 200 MHz transition frequency
  • Compact SOT-23 surface-mount packaging for space-constrained applications

Applications

  • Switching circuits
  • Inverter logic gates
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the manufacturer origin, as the component was originally produced by Fairchild Semiconductor and later acquired by onsemi. Confirm that the specific ordering suffix matches the required tape-and-reel quantity and lead time specifications. Ensure compliance with RoHS directives if applicable to the target market requirements.

Selection Notes

Select this component when a compact PNP solution with integrated biasing is required for digital switching or signal inversion. Compare the 22 kΩ input resistance against other models like the FJV3107R to ensure compatibility with the driving source impedance. Verify that the -50 V breakdown voltage meets the system's maximum operating voltage constraints.

Part Context

This component belongs to the FJV series of pre-biased transistors designed for high-density PCB layouts. It serves as a functional complement to the NPN FJV3107R, allowing for complementary push-pull configurations or differential pairs within the same footprint family.

Replacement Considerations

The FJV3107R is documented as a complementary part. Verify pinout compatibility and parameter matching before substitution.

FJV4107RMTFFJV4107RMTF

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