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The FJV4107RMTF is a PNP epitaxial silicon transistor with built-in bias resistors, housed in an SOT-23 surface-mount package. It features a collector-emitter voltage of -50 V and a continuous collector current of -100 mA. The device integrates a base resistor (R1) of 22 kΩ and an emitter-base resistor (R2) of 47 kΩ, yielding a typical resistor ratio of 0.47. Key electrical characteristics include a DC current gain (hFE) of 68 at -5 mA, a saturation voltage of -0.3 V at -10 mA, and a transition frequency of 200 MHz. Maximum power dissipation is rated at 200 mW.
Verify the manufacturer origin, as the component was originally produced by Fairchild Semiconductor and later acquired by onsemi. Confirm that the specific ordering suffix matches the required tape-and-reel quantity and lead time specifications. Ensure compliance with RoHS directives if applicable to the target market requirements.
Select this component when a compact PNP solution with integrated biasing is required for digital switching or signal inversion. Compare the 22 kΩ input resistance against other models like the FJV3107R to ensure compatibility with the driving source impedance. Verify that the -50 V breakdown voltage meets the system's maximum operating voltage constraints.
This component belongs to the FJV series of pre-biased transistors designed for high-density PCB layouts. It serves as a functional complement to the NPN FJV3107R, allowing for complementary push-pull configurations or differential pairs within the same footprint family.
The FJV3107R is documented as a complementary part. Verify pinout compatibility and parameter matching before substitution.