FJV4108RMTF

FJV4108RMTF

  • Description:TRANS PREBIAS PNP 50V SOT23-3
  • Series:-

SKU:64fbcfd26a90 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V SOT23-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):47 kOhms
  • Resistor - Emitter Base (R2):22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:56 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:200 MHz
  • Power - Max:200 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3

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FJV4108RMTF

Overview

The FJV4108RMTF is a PNP epitaxial silicon transistor with built-in bias resistors, manufactured by onsemi. It operates within a collector-emitter voltage of -50 V and supports a maximum collector current of -100 mA. The device features a DC current gain (hFE) of 56 at -5 mA and a transition frequency (fT) of 200 MHz. Internal resistors R1 and R2 are valued at 47 kΩ and 22 kΩ respectively, yielding a ratio between 1.9 and 2.4. Packaged in SOT-23, it dissipates up to 200 mW and functions reliably across a junction temperature range of -55 °C to 150 °C.

Feature Summary

  • Integrated bias network comprising two internal resistors for simplified circuit design
  • High-speed switching capability indicated by a 200 MHz transition frequency
  • Complementary configuration available relative to the NPN FJV3108R

Applications

  • Switching circuits
  • Inverter applications
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the manufacturer designation as onsemi or Fairchild Semiconductor based on production era. Confirm the SOT-23 package dimensions match the specified mechanical drawing. Ensure the internal resistor values align with the 47 kΩ and 22 kΩ specifications required for the target application logic levels.

Selection Notes

Select this component when a PNP transistor with integrated base biasing is required for space-constrained designs. The fixed resistor ratio simplifies drive requirements compared to discrete configurations. Verify that the -50 V voltage rating and -100 mA current limits accommodate the specific load conditions without exceeding thermal dissipation constraints.

Part Context

This part belongs to the FJV series of prebiased transistors designed for high-density surface mount applications. It serves as a functional complement to the NPN FJV3108R, allowing for matched pairs in push-pull or differential amplifier topologies. The SOT-23 packaging facilitates automated assembly in compact consumer electronics and portable devices.

Replacement Considerations

The FJV4107RMTF is documented as a related variant within the same product family. Verify pinout compatibility and electrical parameter alignment before substitution.

FJV4108RMTFFJV4108RMTF

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