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The FJV4108RMTF is a PNP epitaxial silicon transistor with built-in bias resistors, manufactured by onsemi. It operates within a collector-emitter voltage of -50 V and supports a maximum collector current of -100 mA. The device features a DC current gain (hFE) of 56 at -5 mA and a transition frequency (fT) of 200 MHz. Internal resistors R1 and R2 are valued at 47 kΩ and 22 kΩ respectively, yielding a ratio between 1.9 and 2.4. Packaged in SOT-23, it dissipates up to 200 mW and functions reliably across a junction temperature range of -55 °C to 150 °C.
Verify the manufacturer designation as onsemi or Fairchild Semiconductor based on production era. Confirm the SOT-23 package dimensions match the specified mechanical drawing. Ensure the internal resistor values align with the 47 kΩ and 22 kΩ specifications required for the target application logic levels.
Select this component when a PNP transistor with integrated base biasing is required for space-constrained designs. The fixed resistor ratio simplifies drive requirements compared to discrete configurations. Verify that the -50 V voltage rating and -100 mA current limits accommodate the specific load conditions without exceeding thermal dissipation constraints.
This part belongs to the FJV series of prebiased transistors designed for high-density surface mount applications. It serves as a functional complement to the NPN FJV3108R, allowing for matched pairs in push-pull or differential amplifier topologies. The SOT-23 packaging facilitates automated assembly in compact consumer electronics and portable devices.
The FJV4107RMTF is documented as a related variant within the same product family. Verify pinout compatibility and electrical parameter alignment before substitution.