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The FJV4109RMTF is a PNP epitaxial silicon digital transistor manufactured by onsemi, housed in an SOT-23-3 surface-mount package. It integrates a built-in bias resistor with a typical value of 4.7 kΩ. The device supports a collector-emitter voltage (VCEO) of -40 V and a continuous collector current of -100 mA. Key electrical characteristics include a DC current gain (hFE) ranging from 100 to 600 at -1 mA, a saturation voltage of -0.3 V at -10 mA, and a transition frequency (fT) of 200 MHz. Power dissipation is rated at 200 mW, with an operating temperature range from -55°C to +150°C.
Verify the component status as obsolete or end-of-life through official manufacturer channels before procurement planning. Confirm RoHS compliance details via the specific datasheet revision. Ensure the ordering suffix matches the required tape-and-reel quantity specifications for production integration.
Select this component for PNP switching applications requiring integrated base resistance. Compare the -40 V rating against system voltage requirements. Evaluate the 4.7 kΩ internal resistor value against drive signal constraints. Consider the SOT-23-3 footprint compatibility during PCB layout design.
This part belongs to the FJV4109R series of PNP digital transistors. It serves as the complementary counterpart to the NPN FJV3109R device within the same product family. Both components share similar electrical characteristics and packaging formats for balanced push-pull configurations.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify cross-reference availability through official distributor databases if replacement is necessary.