FJV4110RMTF

Overview

The FJV4110RMTF is a single PNP pre-biased bipolar junction transistor manufactured by Fairchild Semiconductor. It integrates a built-in bias resistor with a ratio of 10, housed in an SOT-23 (TO-236-3) surface-mount package. The device supports a maximum collector-emitter voltage of 40 V and a continuous collector current of 100 mA. Key electrical characteristics include a minimum DC current gain (hFE) of 68 and a transition frequency of 200 MHz. Power dissipation is rated at 200 mW, with operation up to +150°C.

Feature Summary

• Integrates a single PNP transistor with a built-in bias resistor for simplified circuit design
• Optimized for high-speed switching applications with a 200 MHz transition frequency
• Compact SOT-23 surface-mount package suitable for space-constrained designs

Applications

• General-purpose switching circuits
• Driver stages for logic interfaces
• Signal amplification in consumer electronics

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and lead times prior to ordering. Ensure storage conditions meet moisture sensitivity level requirements to maintain reliability during assembly processes.

Selection Notes

Select this component for applications requiring integrated biasing to reduce external component count. Consider the 40V breakdown voltage and 100mA current limits when designing load paths. Verify thermal management capabilities given the 200mW power dissipation rating in the SOT-23 package.

Part Context

This part belongs to the FJV series of pre-biased transistors from Fairchild Semiconductor. These devices combine discrete transistors with internal resistors to streamline board layout. The series offers various resistor ratios and voltage ratings to suit different signal processing needs.

Replacement Considerations

Check datasheets for equivalent parts such as FJV4111RMTF or FJV4112RMTF if different resistor ratios are required. Verify pinout compatibility and electrical parameters before substitution.