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The FJV4111RMTF is a PNP epitaxial silicon transistor with a built-in bias resistor, manufactured by onsemi. It operates with a collector-emitter voltage of -40 V and a collector current of -100 mA. The device features a typical DC current gain (hFE) of 600 at -1 mA and a transition frequency (fT) of 200 MHz. The integrated base resistor has a nominal value of 22 kΩ. Packaged in an SOT-23 surface-mount case, it dissipates up to 200 mW at 25°C ambient temperature.
Verify the manufacturer designation carefully, as the component was originally developed by Fairchild Semiconductor before its acquisition by onsemi. Confirm that the specific suffix matches the required tape-and-reel packaging configuration for your automated assembly line. Ensure the sourcing channel provides traceability to the original datasheet specifications.
Select this component when a PNP transistor with a fixed base drive is required to reduce external component count. The 22 kΩ internal resistor sets the base current, making it suitable for direct logic interface. Compare the -40 V rating against system voltage peaks and ensure the 200 mW power dissipation limit accommodates the thermal environment of the final enclosure.
This part belongs to the family of Bias Resistor Built-In (BRBI) transistors. It serves as the PNP complement to the N-channel FJV3111R. These devices are designed to replace discrete resistor-transistor combinations, reducing board space and assembly costs while maintaining consistent electrical characteristics across production batches.
The FJV3111R is the documented complementary NPN device within the same series. Verify pinout compatibility if substituting with other BRBI transistors from different manufacturers, as base-collector orientations may vary between SOT-23 packages.