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The FJV4112RMTF is a PNP epitaxial silicon digital transistor manufactured by onsemi, featuring a built-in bias resistor. It operates with a collector-emitter voltage of -40 V and a continuous collector current of -100 mA. The device includes an integrated input resistor with a typical value of 47 kΩ. Key electrical characteristics include a DC current gain (hFE) ranging from 100 to 600 at -1 mA, a saturation voltage of -0.3 V at -10 mA, and a transition frequency of 200 MHz. Power dissipation is rated at 200 mW, with an operating temperature range spanning from -55°C to +150°C.
Verify the specific manufacturer source, as the datasheet indicates Fairchild Semiconductor origin while the part number suffix suggests onsemi distribution. Confirm RoHS compliance status through official documentation before integration. Ensure the supply chain handles obsolete or legacy components appropriately if sourcing from secondary markets.
Select this component for PNP switching requirements where a 47 kΩ internal base resistor is optimal. Compare against the NPN counterpart FJV3112R for complementary push-pull configurations. Verify that the -40 V voltage rating meets the system's peak transient requirements.
This component belongs to the FJV series of bias resistor built-in transistors. It serves as the PNP complement to the NPN FJV3112R model. The device utilizes a SOT-23 surface-mount package, designed for compact PCB layouts in consumer and industrial electronics.
The FJV3112R is documented as the complementary NPN equivalent within the same product family. No other direct substitute part numbers are confirmed in the provided documentation.