FJV4112RMTF

FJV4112RMTF

  • Description:TRANS PREBIAS PNP 40V SOT23-3
  • Series:-

SKU:347a0bf2b52f Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 40V SOT23-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Resistors Included:R1 Only
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):40 V
  • Resistor - Base (R1):47 kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:200 MHz
  • Power - Max:200 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3

Download product information

FJV4112RMTF

Overview

The FJV4112RMTF is a PNP epitaxial silicon digital transistor manufactured by onsemi, featuring a built-in bias resistor. It operates with a collector-emitter voltage of -40 V and a continuous collector current of -100 mA. The device includes an integrated input resistor with a typical value of 47 kΩ. Key electrical characteristics include a DC current gain (hFE) ranging from 100 to 600 at -1 mA, a saturation voltage of -0.3 V at -10 mA, and a transition frequency of 200 MHz. Power dissipation is rated at 200 mW, with an operating temperature range spanning from -55°C to +150°C.

Feature Summary

  • Integrates a bias resistor to simplify circuit design and reduce component count in switching applications.
  • Provides high-speed performance suitable for interface and driver circuits with a transition frequency of 200 MHz.
  • Offers robust thermal stability with a maximum junction temperature rating of 150°C.

Applications

  • Switching circuits
  • Inverter logic gates
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the specific manufacturer source, as the datasheet indicates Fairchild Semiconductor origin while the part number suffix suggests onsemi distribution. Confirm RoHS compliance status through official documentation before integration. Ensure the supply chain handles obsolete or legacy components appropriately if sourcing from secondary markets.

Selection Notes

Select this component for PNP switching requirements where a 47 kΩ internal base resistor is optimal. Compare against the NPN counterpart FJV3112R for complementary push-pull configurations. Verify that the -40 V voltage rating meets the system's peak transient requirements.

Part Context

This component belongs to the FJV series of bias resistor built-in transistors. It serves as the PNP complement to the NPN FJV3112R model. The device utilizes a SOT-23 surface-mount package, designed for compact PCB layouts in consumer and industrial electronics.

Replacement Considerations

The FJV3112R is documented as the complementary NPN equivalent within the same product family. No other direct substitute part numbers are confirmed in the provided documentation.

FJV4112RMTFFJV4112RMTF

Click on the inquiry