FJV4113RMTF

Overview

The FJV4113RMTF is a single pre-biased PNP bipolar junction transistor manufactured by onsemi. It features a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. The device includes an integrated base resistor with a typical value of 22 kOhms, simplifying circuit design. It operates within a temperature range of -55°C to +150°C and dissipates up to 200 mW of power. Packaged in a surface-mount SOT-23-3 case, it offers high DC current gain with a minimum hFE of 56.

Feature Summary

• Integrated pre-biasing network eliminates external bias components
• High thermal stability supporting extended operating temperatures
• Compact surface-mount packaging for space-constrained designs

Applications

• General-purpose switching applications
• Driver circuits for low-power loads
• Logic interface buffering

Procurement Notes

Verify component authenticity through authorized distributors due to end-of-life status. Confirm package integrity upon receipt as the device is sensitive to mechanical stress. Review latest datasheet revisions for any parameter updates before final integration into production systems.

Selection Notes

Select this component when a single PNP digital transistor with 50V rating is required. Ensure the 22k internal resistance matches the driving logic levels. Consider thermal management requirements given the 200mW dissipation limit in the small SOT-23-3 package.

Part Context

This part belongs to onsemi's FJV series of pre-biased transistors. These devices combine NPN or PNP transistors with built-in resistors to reduce board space and assembly costs. The FJV4113RMTF specifically utilizes PNP technology for complementary circuit configurations.

Replacement Considerations

MMUN2112LT1G is a confirmed substitute part number available from onsemi for this obsolete component.