FJX1182OTF

Single Bipolar Transistors Overview

The FJX1182OTF is a PNP epitaxial silicon bipolar junction transistor (BJT) manufactured by onsemi. It is designed for surface-mount applications in the SOT-323-3 package. The device features a maximum collector current of 500 mA and a collector-emitter voltage rating of 30 V. Key electrical parameters include a collector-base voltage of 35 V, an emitter-base voltage of 5 V, and a power dissipation capacity of 150 mW. The transistor offers a gain-bandwidth product (fT) of 200 MHz, with a DC current gain (hFE) ranging from 70 to 240. It operates within a temperature range of -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• PNP epitaxial silicon construction for reliable switching performance
• High-frequency capability with 200 MHz gain-bandwidth product
• Compact SOT-323-3 surface-mount package design
• Wide operating temperature range up to 150°C

Single Bipolar Transistors Applications

• General-purpose switching circuits
• Low-power amplifier stages
• Signal processing applications requiring high-frequency response

Single Bipolar Transistors Procurement Notes

Verify component authenticity through authorized onsemi distributors or certified partners. Confirm RoHS compliance status via official Material Composition Declaration documents. Check current lifecycle status as availability may vary. Request datasheets directly from the manufacturer to ensure accurate technical specifications before integration into designs.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring a compact PNP transistor with moderate current handling and high-speed switching characteristics. Ensure the application voltage does not exceed the 30 V collector-emitter limit. Consider thermal management requirements given the 150 mW power dissipation rating in the small SOT-323 package. Verify that the required hFE range aligns with circuit biasing needs.

Single Bipolar Transistors Part Context

This part belongs to the FJX1182 series of single bipolar transistors from onsemi. It is categorized under discrete semiconductor devices specifically engineered for general electronic applications. The series provides standardized performance metrics for designers integrating small-signal or medium-current PNP transistors into modern PCB layouts.

Single Bipolar Transistors Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure replacement parts match the SOT-323 footprint and PNP polarity. Verify that alternative components meet or exceed the 30 V VCEO and 500 mA Ic ratings. Confirm compatibility with existing thermal and frequency response requirements.