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The FJX3004R is an NPN epitaxial silicon transistor with built-in bias resistors, designed for switching applications. It features a collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. The device includes integrated base resistor R1 (typical value 47 kΩ) and emitter resistor R2 (typical value 47 kΩ). Key electrical characteristics include a DC current gain (hFE) of 68 at IC=5mA, a saturation voltage (VCE(sat)) of 0.3 V at IC=10mA, and a transition frequency (fT) of 250 MHz. The component is housed in a SOT-323 surface-mount package.
Verify the specific suffix 'RTF' against official manufacturer documentation to confirm tape-and-reel packaging or variant specifications. Ensure compatibility with the standard FJX3004R datasheet parameters. Confirm RoHS compliance status and check for any obsolescence notices from Fairchild Semiconductor or onsemi prior to procurement.
Select this component for low-power NPN switching tasks requiring minimal external drive components. The built-in resistors eliminate the need for discrete biasing networks, saving board space. Verify that the required collector current does not exceed 100 mA and that the operating voltage remains within the 50 V limit for reliable performance.
This device belongs to the family of Bias Resistor Built-In (BRBI) transistors manufactured by Fairchild Semiconductor, now part of onsemi. These components integrate passive elements directly onto the semiconductor die to streamline digital logic interfacing and signal switching applications.
The FJX4004R is documented as the complementary PNP version of this device. Verify pinout compatibility and resistor values when substituting with other BRBI transistors from different manufacturers.