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The FJX3006R is an NPN epitaxial silicon transistor featuring a built-in bias resistor network, housed in a SOT-323 surface-mount package. It supports a collector-emitter voltage of 50 V and a continuous collector current of 100 mA with a power dissipation rating of 200 mW at 25°C. The integrated resistors consist of R1 (10 kΩ) and R2 (47 kΩ). Key electrical characteristics include a DC current gain of 68 at 5 mA, a saturation voltage of 0.3 V at 10 mA, and a transition frequency of 250 MHz. The device operates within a junction temperature range up to 150°C.
Verify the specific manufacturer origin, as Fairchild Semiconductor was acquired by onsemi. Confirm that the component meets current RoHS compliance standards and check for availability from authorized distributors. Ensure the ordering suffix matches the required tape-and-reel or tube packaging format for your assembly line.
Select this component when a compact NPN switch with integrated base resistance is required. Ensure the load current does not exceed 100 mA and verify that the 50 V collector-emitter voltage rating accommodates the maximum circuit supply voltage. Consider the thermal derating curve if ambient temperatures exceed 25°C to maintain safe junction temperatures.
This component belongs to the family of Bias Resistor Built-In (BRBI) transistors designed to simplify driver applications. It serves as a complement to the PNP variant, the FJX4006R. The SOT-323 package provides a small outline suitable for portable electronics and space-constrained designs requiring reliable switching performance.
The FJX4006R is documented as the complementary PNP device. For direct NPN replacements, verify pinout compatibility (Base-Emitter-Collector) and ensure equivalent voltage, current, and resistor values are maintained in the new component selection.
The internal bias network consists of R1 equal to 10 kΩ and R2 equal to 47 kΩ.
The absolute maximum collector current (IC) is rated at 100 mA.
Pin 1 is Base, Pin 2 is Emitter, and Pin 3 is Collector.