SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FJX3009RTF is an NPN epitaxial silicon digital transistor from the FJX3009R series, manufactured by onsemi. It features a built-in bias resistor with a typical value of 4.7 kΩ and operates in a single configuration within a SOT-323-3 surface-mount package. Key electrical ratings include a collector-emitter voltage (VCEO) of 40 V, a continuous collector current of 100 mA, and a power dissipation of 200 mW at 25°C. The device exhibits a DC current gain (hFE) ranging from 100 to 600 and a current gain bandwidth product (fT) of 250 MHz. Operating temperatures span from -55°C to +150°C.
Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status via official documentation. Check for End-of-Life notices as manufacturing transitions may affect long-term availability. Validate datasheet revisions against specific production batches to ensure parameter consistency.
Select this component for low-voltage switching tasks requiring integrated base resistance. Ensure the 40 V collector-emitter rating exceeds the maximum circuit voltage. Verify that the 200 mW power dissipation limit accommodates thermal constraints in the target enclosure. Compare hFE ranges against load requirements for adequate saturation.
This part belongs to the FJX3009R family of NPN digital transistors. It serves as a complement to the PNP FJX4009R device. The series is designed for general-purpose switching and interface functions where space efficiency and reduced external component count are prioritized.
Direct substitutes include other NPN digital transistors with similar 40 V ratings and ~4.7 kΩ internal resistors. Verify pinout compatibility for SOT-323 packages. Cross-reference specifications for hFE and fT to ensure functional equivalence in high-speed switching roles.