FJX3009RTF

FJX3009RTF

  • Description:TRANS PREBIAS NPN 40V SOT323
  • Series:-

SKU:2778f36a3cba Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 40V SOT323
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Resistors Included:R1 Only
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):40 V
  • Resistor - Base (R1):4.7 kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:250 MHz
  • Power - Max:200 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:SOT-323

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FJX3009RTF

Overview

The FJX3009RTF is an NPN epitaxial silicon digital transistor from the FJX3009R series, manufactured by onsemi. It features a built-in bias resistor with a typical value of 4.7 kΩ and operates in a single configuration within a SOT-323-3 surface-mount package. Key electrical ratings include a collector-emitter voltage (VCEO) of 40 V, a continuous collector current of 100 mA, and a power dissipation of 200 mW at 25°C. The device exhibits a DC current gain (hFE) ranging from 100 to 600 and a current gain bandwidth product (fT) of 250 MHz. Operating temperatures span from -55°C to +150°C.

Feature Summary

  • Integrates a built-in bias resistor for simplified circuit design
  • High-speed switching capability with a 250 MHz bandwidth product
  • Compact SOT-323-3 package suitable for high-density layouts

Applications

  • Switching circuits
  • Inverter applications
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status via official documentation. Check for End-of-Life notices as manufacturing transitions may affect long-term availability. Validate datasheet revisions against specific production batches to ensure parameter consistency.

Selection Notes

Select this component for low-voltage switching tasks requiring integrated base resistance. Ensure the 40 V collector-emitter rating exceeds the maximum circuit voltage. Verify that the 200 mW power dissipation limit accommodates thermal constraints in the target enclosure. Compare hFE ranges against load requirements for adequate saturation.

Part Context

This part belongs to the FJX3009R family of NPN digital transistors. It serves as a complement to the PNP FJX4009R device. The series is designed for general-purpose switching and interface functions where space efficiency and reduced external component count are prioritized.

Replacement Considerations

Direct substitutes include other NPN digital transistors with similar 40 V ratings and ~4.7 kΩ internal resistors. Verify pinout compatibility for SOT-323 packages. Cross-reference specifications for hFE and fT to ensure functional equivalence in high-speed switching roles.

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