FJX3010RTF

Overview

The FJX3010RTF is an NPN epitaxial silicon transistor featuring a built-in bias resistor, housed in a surface-mount SOT-323 package. It operates with a collector-emitter voltage of 40 V and supports a continuous collector current of 100 mA. The device includes an integrated 10 kΩ input resistor (range 7–13 kΩ). Key electrical parameters include a DC current gain (hFE) of 100 to 600 at 1 mA, a saturation voltage of 0.3 V at 10 mA, and a transition frequency of 250 MHz. Total power dissipation is rated at 200 mW.

Feature Summary

• Integrated bias resistor for simplified circuit design
• High-speed switching capability with defined bandwidth
• Compact surface-mount packaging for space-constrained applications

Applications

• Switching circuits
• Inverter configurations
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific suffix 'TF' against manufacturer documentation to confirm tape-and-reel packaging details. Ensure compatibility with existing PCB footprints for the SOT-323 form factor. Confirm that the integrated resistor value aligns with the target logic interface requirements before finalizing component selection.

Selection Notes

Select this component when a compact NPN solution with pre-biased operation is required. The 10 kΩ internal resistor eliminates external components, reducing board space. Verify that the 40 V rating and 100 mA current capacity meet the load requirements. Consider the thermal derating characteristics if operating above ambient temperatures.

Part Context

This part belongs to the FJX series of bias-resistor-built-in transistors manufactured by Fairchild Semiconductor, now part of onsemi. It serves as the NPN complement to the PNP FJX4010R. The series is designed for general-purpose switching and logic interfacing tasks where minimal external components are preferred.

Replacement Considerations

Check for direct equivalents from other manufacturers offering NPN transistors with integrated base resistors in SOT-323 packages. Verify pinout compatibility and ensure the replacement maintains similar hFE ranges and saturation voltages for equivalent performance.