FJX3011RTF

Overview

The FJX3011RTF is an NPN epitaxial silicon transistor with a built-in bias resistor, manufactured by onsemi. It operates within a collector-base voltage of 40 V and a collector-emitter voltage of 40 V. The device supports a maximum collector current of 100 mA and dissipates up to 200 mW of power. Key electrical characteristics include a DC current gain (hFE) ranging from 100 to 600 at IC=1mA, and a current gain bandwidth product (fT) of 250 MHz. The integrated resistor value is typically 22 kΩ. It is housed in a SOT-323 surface-mount package.

Feature Summary

• Integrated bias resistor for simplified circuit design
• High DC current gain suitable for switching applications
• Compact SOT-323 surface-mount package

Applications

• Switching circuits
• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the manufacturer designation on official documentation, as the component was originally produced by Fairchild Semiconductor before its acquisition by onsemi. Confirm that the specific ordering suffix matches the required tape-and-reel packaging configuration for your assembly process. Ensure compatibility with RoHS standards if applicable to your manufacturing requirements.

Selection Notes

Select this component when a compact NPN transistor with an integrated base resistor is required for space-constrained designs. Consider the 22 kΩ internal resistance value for biasing calculations. Verify that the 40 V voltage ratings and 100 mA current limits align with the operational parameters of the target application circuit.

Part Context

The FJX3011R belongs to a family of prebiased transistors designed to reduce external component count. It serves as a complement to the PNP variant, the FJX4011R. These devices are engineered to streamline the design of switching and interface logic by eliminating the need for discrete base resistors.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.