FJX3013RTF

FJX3013RTF

  • Description:TRANS PREBIAS NPN 50V SOT323
  • Series:-

SKU:1eb16e803356 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V SOT323
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):2.2 kOhms
  • Resistor - Emitter Base (R2):47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:250 MHz
  • Power - Max:200 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:SOT-323

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FJX3013RTF

Overview

The FJX3013RTF is an NPN epitaxial silicon digital transistor from the FJX3013R series, manufactured by onsemi. It features a built-in bias resistor network with typical values of R1=2.2 kΩ and R2=47 kΩ. The device operates with a collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. Key electrical characteristics include a DC current gain (hFE) of 68 at IC=5mA, a saturation voltage (VCE(sat)) of 0.3 V at IC=10mA, and a transition frequency (fT) of 250 MHz. Power dissipation is rated at 200 mW, with an operating temperature range from -55°C to +150°C. It is housed in a SOT-323 surface-mount package.

Feature Summary

  • Integrates bias resistors (R1=2.2kΩ, R2=47kΩ) for simplified circuit design
  • High-speed switching capability with fT of 250 MHz
  • Low saturation voltage for efficient power handling
  • Compact SOT-323 surface-mount packaging

Applications

  • Switching circuits
  • Inverter applications
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status via official documentation. Check for obsolescence notices as Fairchild Semiconductor products may have discontinuation statuses. Ensure storage conditions remain within specified limits to maintain reliability. Validate datasheet revision against current procurement orders.

Selection Notes

Select this component for applications requiring integrated biasing in compact designs. Consider the 50V voltage rating and 100mA current limit for load requirements. Evaluate thermal management needs given the 200mW power dissipation in small packages. Compare hFE and fT specifications against signal speed demands. Verify compatibility with existing PCB footprints for SOT-323 mounting.

Part Context

The FJX3013RTF belongs to the FJX3013R family of digital transistors originally developed by Fairchild Semiconductor, now part of onsemi. These devices are designed to replace discrete resistor-transistor combinations, reducing board space and assembly costs. The 'RTF' suffix typically indicates specific tape-and-reel packaging configurations for automated surface-mount assembly processes.

Replacement Considerations

The datasheet identifies the FJX4013R as a complementary PNP counterpart. Direct substitutes should match the 2.2kΩ/47kΩ resistor ratio and SOT-323 footprint. Verify equivalent electrical parameters including VCEO, IC, and hFE before implementation.

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