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The FJX3013RTF is an NPN epitaxial silicon digital transistor from the FJX3013R series, manufactured by onsemi. It features a built-in bias resistor network with typical values of R1=2.2 kΩ and R2=47 kΩ. The device operates with a collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. Key electrical characteristics include a DC current gain (hFE) of 68 at IC=5mA, a saturation voltage (VCE(sat)) of 0.3 V at IC=10mA, and a transition frequency (fT) of 250 MHz. Power dissipation is rated at 200 mW, with an operating temperature range from -55°C to +150°C. It is housed in a SOT-323 surface-mount package.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status via official documentation. Check for obsolescence notices as Fairchild Semiconductor products may have discontinuation statuses. Ensure storage conditions remain within specified limits to maintain reliability. Validate datasheet revision against current procurement orders.
Select this component for applications requiring integrated biasing in compact designs. Consider the 50V voltage rating and 100mA current limit for load requirements. Evaluate thermal management needs given the 200mW power dissipation in small packages. Compare hFE and fT specifications against signal speed demands. Verify compatibility with existing PCB footprints for SOT-323 mounting.
The FJX3013RTF belongs to the FJX3013R family of digital transistors originally developed by Fairchild Semiconductor, now part of onsemi. These devices are designed to replace discrete resistor-transistor combinations, reducing board space and assembly costs. The 'RTF' suffix typically indicates specific tape-and-reel packaging configurations for automated surface-mount assembly processes.
The datasheet identifies the FJX4013R as a complementary PNP counterpart. Direct substitutes should match the 2.2kΩ/47kΩ resistor ratio and SOT-323 footprint. Verify equivalent electrical parameters including VCEO, IC, and hFE before implementation.