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The FJX3014RTF is a digital NPN transistor manufactured by onsemi, housed in an SOT-323-3 surface-mount package. It features a typical input resistance of 47 kOhms and a typical resistor ratio of 2.1. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Peak DC collector current is also rated at 100 mA, with a power dissipation capacity of 200 mW. The minimum DC collector/base gain (hfe) is 56, and the emitter-base voltage (VEBO) is 10 V. Operating temperatures range from -55 C to +150 C.
Verify the specific suffix RTF against official datasheets to confirm reel specifications and tape-and-reel dimensions. Confirm RoHS compliance status through the manufacturer's latest product compliance documentation before integration into regulated assemblies.
Select this component when a single NPN digital transistor with integrated biasing is required. Ensure the 50 V VCEO rating exceeds the maximum circuit voltage. Verify that the 100 mA current limit accommodates the load requirements without exceeding the 200 mW power dissipation threshold under worst-case thermal conditions.
This part belongs to the FJX3008R series of digital transistors. It shares the same SOT-323-3 form factor and basic electrical characteristics as other members of the family, differing primarily in internal resistor values or gain specifications defined by the specific model number within the series.
Cross-reference with other onsemi FJX series parts in SOT-323 packages. Verify pinout compatibility and electrical parameters such as VCEO and hfe before substituting with equivalent components from other manufacturers.