FJX4003RTF

Overview

The FJX4003RTF is a PNP silicon epitaxial digital transistor manufactured by onsemi. It integrates a single NPN transistor with internal biasing resistors in an SOT-323-3 surface-mount package. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 V, a continuous collector current of -100 mA, and a power dissipation rating of 200 mW. The device features a typical input resistance of 22 kOhms and a minimum DC current gain (hFE) of 56. It operates within a temperature range of -55°C to +150°C.

Feature Summary

• Integrated biasing network reduces external component count
• High-density SMD packaging for space-constrained designs
• Wide operating temperature range for industrial applications

Applications

• General-purpose switching circuits
• Logic interface buffering
• Driver stages for low-power loads

Procurement Notes

Verify the specific suffix 'Q' against official documentation, as it may indicate special handling or qualification status. Confirm RoHS compliance details directly with the manufacturer, as some sources list this part as non-compliant. Check for End-of-Life notices or Production Discontinuation announcements prior to design finalization.

Selection Notes

Select this component for PNP logic interfacing where a 22 kOhm base resistor is appropriate. Ensure the circuit design accommodates the 200 mW power dissipation limit in the SOT-323-3 package. Compare against the FJX3008RTF if an NPN configuration with different resistance values is required instead.

Part Context

This part belongs to the FJX series of digital transistors from onsemi. These devices combine bipolar junction transistors with on-chip resistors to simplify circuit design. The SOT-323-3 package is a standard small-outline transistor form factor widely used in portable electronics and compact consumer devices.

Replacement Considerations

Direct substitutes are not explicitly confirmed in public data. Consider the FJX3007RTF or FJX3008RTF for similar digital transistor functions, noting differences in polarity and resistance values.