FJX4004RTF

Overview

The FJX4004RTF is a PNP epitaxial silicon transistor with built-in bias resistors, manufactured by onsemi. It operates with a collector-emitter voltage of -50 V and a collector current of -100 mA. The device features a DC current gain (hFE) of 68 at -5 mA and a saturation voltage of -0.3 V at -10 mA. Internal resistors R1 and R2 are nominally 47 kΩ each. It has a maximum power dissipation of 200 mW and a junction temperature rating of 150 °C. The component is housed in an SOT-323 package.

Feature Summary

• Integrated bias resistor network for simplified circuit design
• High-speed switching capability with 200 MHz bandwidth product
• Low input off-voltage for reliable logic interfacing

Applications

• Switching circuits
• Inverter applications
• Interface circuits
• Driver circuits

Procurement Notes

Verify the specific suffix 'RTF' against official documentation to confirm tape and reel packaging details. Confirm RoHS compliance status through the manufacturer's latest datasheet or certification documents before procurement.

Selection Notes

Select this component for low-power PNP switching tasks requiring integrated base drive. Ensure the -50 V voltage rating accommodates the circuit's peak reverse voltages. Verify that the 200 mW power dissipation limit is sufficient for the intended thermal environment.

Part Context

This part belongs to the FJX series of bias resistor built-in transistors. It serves as the PNP complement to the NPN FJX3004R. The series is designed to reduce external component count in digital switching and interface applications.

Replacement Considerations

The FJX3004R is documented as the complementary NPN device within the same family. Verify pinout compatibility and electrical parameters when considering alternative manufacturers' equivalents.