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The FJX4006RTF-ON is a single PNP silicon epitaxial digital transistor manufactured by onsemi. It features an integrated base resistor with a typical value of 22 kOhms and a typical resistance ratio of 1. The device is housed in a surface-mount SOT-323-3 package, weighing approximately 5 mg. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V, a continuous collector current of -100 mA, and a peak DC collector current of 100 mA. Power dissipation is rated at 200 mW, with a minimum DC collector/base gain (hfe) of 56. The component operates within a temperature range of -55°C to +150°C.
Verify the specific ordering suffix and manufacturer part number against official onsemi documentation to ensure compatibility. Confirm that the component meets all required environmental and compliance standards for the intended application. Check for any product lifecycle notices, such as end-of-life or obsolescence status, prior to procurement decisions.
Select this component when a single PNP digital transistor with a 50 V rating and 100 mA current capacity is required. Ensure the SOT-323-3 package fits the board layout constraints. Verify that the integrated 22 kOhm base resistor aligns with the drive requirements of the control logic interface.
This part belongs to the family of single pre-biased bipolar transistors from onsemi. These devices combine a BJT with internal biasing resistors to reduce component count and assembly time. The FJX4006RTF-ON specifically utilizes a PNP configuration suitable for low-side or high-side switching tasks in consumer electronics and industrial control systems.
Public confirmed substitute part numbers are not available in the provided source material.