FJX4007RTF

Overview

The FJX4007RTF is a PNP epitaxial silicon transistor with built-in bias resistors, manufactured by onsemi. It operates with a collector-emitter voltage of -50 V and a collector current of -100 mA. The device features an internal resistor network consisting of R1 (22 kΩ) and R2 (47 kΩ). Key electrical characteristics include a DC current gain of 68 at -5 mA, a saturation voltage of -0.3 V at -10 mA, and a transition frequency of 200 MHz. Packaged in SOT-323, it is designed for switching applications.

Feature Summary

• Integrated bias resistor network simplifies circuit design
• High-speed switching capability with 200 MHz transition frequency
• Low saturation voltage for efficient power handling

Applications

• Switching circuits
• Inverter logic gates
• Interface driver circuits

Procurement Notes

Verify the component status as obsolete or end-of-life through official manufacturer channels before procurement planning. Confirm that the specific RTF suffix corresponds to the required tape and reel packaging format. Ensure compatibility with existing PCB footprints for the SOT-323 package during sourcing validation.

Selection Notes

Select this component for designs requiring a compact PNP solution with integrated base drive resistors. Verify that the -50 V collector-emitter rating meets the system's maximum voltage requirements. Consider the 200 MHz bandwidth for high-frequency signal processing tasks where low propagation delay is critical.

Part Context

This part belongs to the FJX series of bias resistor built-in transistors. It serves as the PNP complement to the NPN FJX3007R model. The series is engineered to reduce external component count and board space in digital logic and interface applications.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation.