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The FJX4010RTF is a PNP epitaxial silicon transistor featuring an integrated bias resistor, manufactured by onsemi (formerly Fairchild Semiconductor). It operates with a collector-emitter voltage of -40 V and a collector current of -100 mA. The device includes a built-in 10 kΩ resistor and offers a DC current gain ranging from 100 to 600 at -1 mA. Key electrical parameters include a saturation voltage of -0.3 V at -10 mA and a transition frequency of 200 MHz. Packaged in SOT-323, it supports junction temperatures up to 150 °C.
Verify the component status as the original datasheet indicates potential discontinuation or limited availability. Confirm the manufacturer source, noting the historical association with Fairchild Semiconductor prior to its acquisition by onsemi. Ensure the specific suffix matches the required tape-and-reel packaging configuration for production integration.
Select this component for low-current PNP switching tasks requiring minimal external components. The internal 10 kΩ resistor reduces board space and part count compared to discrete transistors. Verify that the -40 V rating and -100 mA current limit align with the target application's load requirements and operating conditions.
This device serves as the PNP complement to the NPN FJX3010R within the same product family. Both devices share similar electrical characteristics and packaging, facilitating balanced push-pull configurations or differential pairs in interface and driver applications where matched performance is beneficial.
The FJX3010R is documented as the complementary NPN counterpart. No other direct replacement part numbers are explicitly listed in the provided documentation.