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The FJX4011RTF is a PNP epitaxial silicon transistor with an integrated bias resistor, manufactured by onsemi. It operates within a collector-emitter voltage of -40 V and supports a collector current of -100 mA. The device features a typical DC current gain (hFE) ranging from 100 to 600 at -1 mA. Key electrical parameters include a saturation voltage of -0.3 V at -10 mA and a transition frequency of 200 MHz. The built-in resistor has a nominal value of 22 kΩ. It is housed in a compact SOT-323 surface-mount package.
Verify the specific suffix 'RTF' against official documentation to confirm tape and reel packaging details. Ensure compatibility with existing PCB footprints for the SOT-323 package. Confirm that the component meets all required environmental standards for the intended deployment environment before finalizing procurement orders.
Select this component when a PNP transistor with built-in base resistance is required to reduce external component count. It serves as a complement to the NPN FJX3011R. Consider the 22 kΩ internal resistance value for base drive calculations. Ensure the application voltage does not exceed the -40 V rating for reliable operation.
This component belongs to the Fairchild Semiconductor transistor family, now under onsemi. It is designed as a complementary device to the FJX3011R NPN transistor. The series is optimized for low-power switching and logic interface tasks where minimal external biasing components are preferred.
The datasheet identifies the FJX3011R as a complementary part. Verify pinout compatibility if substituting with other PNP transistors in the SOT-323 package. Check equivalent hFE ranges and saturation voltages to ensure circuit performance remains within specifications.