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The FJX4013RTF is a PNP epitaxial silicon transistor featuring built-in bias resistors, manufactured by onsemi under the Fairchild Semiconductor lineage. It operates with a collector-emitter voltage of -50 V and a collector current of -100 mA. The device integrates a base resistor (R1) of approximately 2.2 kΩ and an emitter-base resistor (R2) of 47 kΩ. Key electrical characteristics include a DC current gain (hFE) of at least 68 at -5 mA, a saturation voltage of -0.3 V at -10 mA, and a transition frequency of 200 MHz. Packaged in SOT-323, it supports junction temperatures up to 150 °C.
Verify the manufacturer origin carefully, as the component originates from Fairchild Semiconductor, which was acquired by onsemi. Confirm that the specific ordering suffix 'TF' corresponds to the required tape-and-reel packaging format intended for automated surface-mount assembly processes.
Select this component when a compact PNP solution with integrated biasing is required to reduce external component count. Ensure the application demands a maximum collector current within 100 mA and a voltage rating compatible with -50 V limits. Verify thermal constraints align with the 200 mW power dissipation limit in the SOT-323 package.
This part serves as the complementary counterpart to the NPN type FJX3013R within the same family of bias-resistor built-in transistors. Both devices share similar electrical profiles and packaging, allowing for symmetrical push-pull or differential configurations in switching and amplification designs.
Direct substitutes include the FJX3013R for complementary NPN requirements. Other generic PNP transistors with built-in resistors may function but require verification of pinout compatibility and exact resistance values to ensure circuit stability.