FJX4014RTF

FJX4014RTF

  • Description:TRANS PREBIAS PNP 50V SOT323
  • Series:-

SKU:3d97b9f99380 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V SOT323
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):4.7 kOhms
  • Resistor - Emitter Base (R2):47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:68 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:200 MHz
  • Power - Max:200 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:SOT-323

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FJX4014RTF

Overview

The FJX4014RTF is a PNP epitaxial silicon transistor with built-in bias resistors, packaged in an SOT-323 surface-mount case. It features a collector-emitter voltage of -50 V and a collector current rating of -100 mA. The device includes an internal base resistor (R1) of 4.7 kΩ and a feedback resistor (R2) of 47 kΩ. Key electrical characteristics include a DC current gain (hFE) of 68 at -5 mA, a saturation voltage of -0.3 V, and a transition frequency of 200 MHz. The component operates within a junction temperature range up to 150 °C.

Feature Summary

  • Integrated bias network consisting of a 4.7 kΩ base resistor and a 47 kΩ feedback resistor for simplified circuit design.
  • High-speed switching capability supported by a 200 MHz current gain bandwidth product.
  • Low saturation voltage of -0.3 V ensures efficient power dissipation during conduction states.

Applications

  • Switching circuits
  • Inverter applications
  • Interface circuits
  • Driver circuits

Procurement Notes

Verify the specific suffix 'TF' against manufacturer documentation to confirm tape-and-reel packaging specifications. Ensure compatibility with the SOT-323 footprint dimensions provided in the datasheet. Confirm that the component meets required environmental standards for the intended operational temperature range.

Selection Notes

Select this component for designs requiring a compact PNP solution with integrated biasing. The 4.7 kΩ internal resistor simplifies drive requirements compared to discrete transistors. Verify that the -100 mA current limit and -50 V voltage ratings align with the maximum load conditions of the target application.

Part Context

This part serves as the complement to the NPN FJX3014R transistor within the same product family. Both devices share similar packaging and functional characteristics, allowing for symmetrical push-pull configurations or complementary switching pairs in space-constrained PCB layouts.

Replacement Considerations

The FJX3014R is documented as a complementary device. Verify pinout compatibility and electrical symmetry before substitution. No other direct replacement part numbers are confirmed in the available source material.

FAQ

What are the values of the internal resistors?

The device contains a base resistor (R1) of 4.7 kΩ and a feedback resistor (R2) of 47 kΩ.

What is the package type for the FJX4014RTF?

The component is housed in an SOT-323 surface-mount package.

What is the maximum collector current rating?

The absolute maximum collector current (IC) is rated at -100 mA.

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