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The FJX4014RTF is a PNP epitaxial silicon transistor with built-in bias resistors, packaged in an SOT-323 surface-mount case. It features a collector-emitter voltage of -50 V and a collector current rating of -100 mA. The device includes an internal base resistor (R1) of 4.7 kΩ and a feedback resistor (R2) of 47 kΩ. Key electrical characteristics include a DC current gain (hFE) of 68 at -5 mA, a saturation voltage of -0.3 V, and a transition frequency of 200 MHz. The component operates within a junction temperature range up to 150 °C.
Verify the specific suffix 'TF' against manufacturer documentation to confirm tape-and-reel packaging specifications. Ensure compatibility with the SOT-323 footprint dimensions provided in the datasheet. Confirm that the component meets required environmental standards for the intended operational temperature range.
Select this component for designs requiring a compact PNP solution with integrated biasing. The 4.7 kΩ internal resistor simplifies drive requirements compared to discrete transistors. Verify that the -100 mA current limit and -50 V voltage ratings align with the maximum load conditions of the target application.
This part serves as the complement to the NPN FJX3014R transistor within the same product family. Both devices share similar packaging and functional characteristics, allowing for symmetrical push-pull configurations or complementary switching pairs in space-constrained PCB layouts.
The FJX3014R is documented as a complementary device. Verify pinout compatibility and electrical symmetry before substitution. No other direct replacement part numbers are confirmed in the available source material.
The device contains a base resistor (R1) of 4.7 kΩ and a feedback resistor (R2) of 47 kΩ.
The component is housed in an SOT-323 surface-mount package.
The absolute maximum collector current (IC) is rated at -100 mA.