SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FJY3004R-ON is a single NPN pre-biased bipolar junction transistor (BJT) manufactured by onsemi. It integrates internal base and emitter resistors within a compact SOT-523F surface-mount package. The device supports a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA, with a total power dissipation rating of 200 mW. Key electrical characteristics include a transition frequency of 250 MHz and a minimum DC current gain (hFE) of 56 at 5 mA and 5 V. The integrated biasing network consists of a 47 kOhm base resistor (R1) and a 47 kOhm emitter resistor (R2), simplifying circuit design for switching and amplification applications.
Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging configuration. Confirm RoHS compliance status and moisture sensitivity level requirements prior to integration into production workflows. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability.
Select this component when a compact NPN solution with built-in biasing is required for low-power switching tasks. Ensure the 50 V breakdown voltage and 100 mA current limits exceed the operational circuit demands. Consider the SOT-523F thermal characteristics if operating near the 200 mW power dissipation limit in enclosed environments.
This component belongs to the FJY300 series of pre-biased transistors from onsemi. These devices are engineered to replace discrete resistor-transistor combinations, offering improved board space efficiency and consistent electrical performance. The series is widely utilized in consumer electronics and industrial control systems where reliable small-signal handling is necessary.
Consult the official onsemi cross-reference documentation for verified equivalent parts. Substitutions must match the NPN configuration, 50 V rating, SOT-523F footprint, and integrated 47k/47k resistor values to maintain circuit functionality.