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The FJY3013R is a pre-biased NPN single bipolar junction transistor manufactured by onsemi. It features an integrated bias resistor network within an SC-89-3 surface-mount package. The device supports a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Key electrical specifications include a transition frequency of 250 MHz, a minimum DC current gain (hFE) of 56 at 5 mA and 5 V, and a maximum saturation voltage of 300 mV at 500 µA base current and 10 mA collector current. Power dissipation is rated at 200 mW with a collector cutoff current of 100 nA.
Verify the specific ordering suffix to confirm packaging configuration, as distributors may list variations such as tape-and-reel formats. Confirm RoHS compliance status through official datasheets or manufacturer notifications prior to integration. Check part lifecycle status, as availability may be limited for discontinued components. Ensure supplier documentation matches the exact part number to avoid substitution errors in production.
Select this component when a compact NPN switch with built-in biasing is required. The 50 V rating suits low-voltage logic systems. Compare hFE and saturation voltage requirements against load conditions. Verify thermal management needs given the 200 mW power dissipation limit in the small SC-89-3 package. Consider pinout compatibility if replacing existing designs.
The FJY3013R belongs to onsemi's lineup of pre-biased transistors designed to replace discrete resistor-transistor combinations. These devices integrate internal resistors to set base current, improving switching speed and reducing board space. This specific model targets applications requiring reliable NPN switching with minimal external components.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult onsemi technical support or authorized distributors for verified cross-reference data before implementing alternative components.