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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V SOT523F
- Series：-
- Mfr：Fairchild Semiconductor
- Package：Bulk
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：4.7 kOhms
- Resistor - Emitter Base (R2)：47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- Frequency - Transition：200 MHz
- Power - Max：200 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-89, SOT-490
- Supplier Device Package：SOT-523F
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Overview
The FJY4014R is a PNP epitaxial silicon transistor manufactured by Fairchild Semiconductor. It is housed in a small outline SOT package with three terminals and operates at a maximum power dissipation of 0.2 W. The device supports a collector-emitter voltage of 50 V and a maximum collector current of 0.1 A. It features a built-in bias resistor with a ratio of 21.36, ensuring a minimum DC current gain (hFE) of 68. The component is rated for operation up to 150 °C and complies with RoHS standards.
Feature Summary
- Integrated biasing network with a fixed resistor ratio of 21.36
- PNP epitaxial silicon construction for reliable switching
- Compact SOT surface-mount packaging
Applications
- General-purpose switching circuits
- Logic interface drivers
- Biasing applications requiring integrated resistance
Procurement Notes
Verify the specific datasheet revision and manufacturer documentation when sourcing the FJY4014R. Confirm that the supplier provides original Fairchild Semiconductor components to ensure compliance with the specified electrical parameters and RoHS certification status. Cross-reference the part number against official distributor catalogs to validate authenticity and technical specifications.
Selection Notes
Select the FJY4014R for designs requiring a PNP transistor with an integrated bias resistor to simplify circuit layout. Ensure the application stays within the 0.2 W power dissipation limit and 50 V collector-emitter voltage rating. Consider the SOT package size for space-constrained PCB layouts and verify thermal management requirements for the 150 °C maximum operating temperature.
Part Context
This component belongs to the family of discrete bipolar junction transistors produced by Fairchild Semiconductor. It utilizes epitaxial silicon technology to provide stable performance in low-power switching applications. The inclusion of a built-in resistor distinguishes it from standard discrete transistors, offering a compact solution for biasing needs in consumer and industrial electronics.
Replacement Considerations
Consult official Fairchild Semiconductor substitution guides for verified equivalents. Generic replacements must match the PNP configuration, SOT package, and integrated resistor ratio of 21.36 to maintain circuit functionality.
