FKP253

Single FETs, MOSFETs Overview

The FKP253 is an N-Channel MOS FET manufactured by Sanken Electric Co., Ltd. It features a Drain to Source Voltage (V_DSS) of 250 V and a continuous Drain Current (I_D) rating of ±20 A at T_a = 25 °C. The device supports a Pulsed Drain Current (I_D(pulse)) of ±80 A with a pulse width ≤100 μs and duty cycle ≤1%. Maximum Power Dissipation (P_D) is rated at 40 W at T_c = 25 °C. Key electrical characteristics include a Gate Threshold Voltage (V_TH) of 3.0 to 4.5 V, Forward Transconductance (Re(Yfs)) of 8 to 17 S, and Static Drain to Source On-Resistance (RDS(on)) of 86 to 95 mΩ at I_D=10A, V_GS=10V. Capacitance values measured at V_DS=25V, f=1MHz are Input Capacitance (C_iss) of 1600 pF, Output Capacitance (C_oss) of 280 pF, and Reverse Transfer Capacitance (C_rss) of 50 pF. Switching times at I_D=10A, V_DD≈120V include Turn-On Delay Time (t_d(on)) of 30 ns, Rise Time (t_r) of 60 ns, Turn-Off Delay Time (t_d(off)) of 80 ns, and Fall Time (t_f) of 45 ns. Single Pulse Avalanche Energy (E_AS) is guaranteed at 160 mJ under specific test conditions.

Single FETs, MOSFETs Feature Summary

• Low on-resistance
• Low input capacitance
• Avalanche energy capability guaranteed

Single FETs, MOSFETs Applications

• PDP driving
• High speed switching

Single FETs, MOSFETs Procurement Notes

Verify the exact ordering suffix against the manufacturer's current catalog, as suffixes may indicate variations in packaging or tape-and-reel specifications. Confirm that the FM20 (TO220 Full Mold) package matches your board layout requirements. Ensure thermal management designs account for the specified power dissipation limits at the intended case temperature.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high voltage handling up to 250 V combined with moderate current capabilities. The guaranteed avalanche energy capability makes it suitable for inductive load switching where unclamped inductive switching events may occur. Evaluate the thermal resistance and heatsinking requirements based on the 40 W maximum power dissipation rating at 25 °C case temperature.

Single FETs, MOSFETs Part Context

The FKP253 belongs to the FKP series of N-Channel MOS FETs produced by Sanken Electric. These devices are designed for general-purpose power switching applications. The FM20 package provides a robust mechanical structure suitable for through-hole mounting on printed circuit boards, offering reliable performance in consumer electronics and industrial control systems.

Single FETs, MOSFETs Replacement Considerations

No public substitute part numbers are documented in the provided source material.

Single FETs, MOSFETs FAQ

What is the guaranteed single pulse avalanche energy?

The single pulse avalanche energy (E_AS) is guaranteed at 160 mJ under test conditions of V_DD=20V, L=740μH, I_Lp=20A, unclamped, and R_G=50Ω.

What is the maximum pulsed drain current?

The maximum pulsed drain current (I_D(pulse)) is ±80 A, provided the pulse width is ≤100 μs and the duty cycle is ≤1%.

What are the typical switching times for this MOS FET?

At I_D=10A and V_DD≈120V, the turn-on delay time is 30 ns, rise time is 60 ns, turn-off delay time is 80 ns, and fall time is 45 ns.