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FL06250A is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists fastSiC. Its product description is SICFET N-CH 650V 10.7A TO-252. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for FL06250A
- Description：SICFET N-CH 650V 10.7A TO-252
- Series：Lightning
- Mfr：fastSiC
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：10.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：15V
- Rds On (Max) @ Id, Vgs：330mOhm @ 3A, 15V
- Vgs(th) (Max) @ Id：2V @ 6mA
- Gate Charge (Qg) (Max) @ Vgs：18.2 nC @ 12 V
- Vgs (Max)：15V
- Input Capacitance (Ciss) (Max) @ Vds：436 pF @ 400 V
- FET Feature：-
- Power Dissipation (Max)：46.8W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Single FETs, MOSFETs datasheet and documents for FL06250A
Single FETs, MOSFETs Overview
The FL06250A is a Silicon Carbide MOSFET from the Falcon Series, rated for 650V drain-source voltage and 250mΩ on-state resistance. It operates with a recommended gate-source turn-on voltage of 12 to 15V and supports junction temperatures up to 175°C. The component features a continuous drain current of 10.7A and a pulse drain current of 18.8A, with a total power dissipation of 46.8W at 25°C case temperature. It utilizes TO-252 (DPAK) or PDFN 8x8 packages.
Single FETs, MOSFETs Feature Summary
- Optimized RDS(on) combined with rapid switching behavior for high efficiency
- Low profile packaging designed to minimize parasitic inductance
- High avalanche endurance capability ensuring robust operation
- Compatible with standard 12V gate drivers for simplified integration
Single FETs, MOSFETs Applications
- Switching Mode Power Supply
- Power Factor Correction
- Telecom Power
- Renewable Energy Systems
Single FETs, MOSFETs Procurement Notes
Verify the specific package variant required, as the FL06250A designation corresponds to the TO-252 DPAK form factor, while the FL06250G denotes the PDFN 8x8 version. Confirm that the application environment remains within the specified -55°C to 175°C junction temperature range. Ensure gate drive circuits are configured to the recommended 12V to 15V turn-on voltage to maintain optimal performance characteristics.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring high power density and compact system footprints due to its low parasitic inductance packaging. It is suitable for applications demanding high-frequency operation and elevated temperature resilience. Consider the 250mΩ on-state resistance when calculating conduction losses. Verify compatibility with existing 12V gate driver architectures before finalizing the design.
Single FETs, MOSFETs Part Context
This device belongs to the Falcon Series of Silicon Carbide MOSFETs manufactured by Fast SiC Semiconductor Inc. The series focuses on enabling high-efficiency power conversion through optimized switching characteristics. The FL06250 model line includes both TO-252 and PDFN 8x8 package options to accommodate different thermal and spatial constraints in modern power electronics.
Single FETs, MOSFETs Replacement Considerations
Consult the manufacturer's documentation for comparable products. Contact Fast SiC Semiconductor Inc. directly for information regarding equivalent components or alternative part numbers suitable for specific design modifications.
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