FL06320G

$2.82

Description：SICFET N-CH 650V 8.8A PDFN8x8
Series：Lightning
Mfr：fastSiC
Package：Tape & Reel (TR)

SKU:c831db04938e Category: Single FETs, MOSFETs Brand: fastSiC

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Product introduction

FL06320G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists fastSiC. Its product description is SICFET N-CH 650V 8.8A PDFN8x8. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FL06320G

Description：SICFET N-CH 650V 8.8A PDFN8x8
Series：Lightning
Mfr：fastSiC
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：8.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：320mOhm @ 2A, 15V
Vgs(th) (Max) @ Id：1.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs：14.5 nC @ 12 V
Vgs (Max)：15V
Input Capacitance (Ciss) (Max) @ Vds：344 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：41W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：4-PDFN (8x8)
Package / Case：4-PowerTSFN

Single FETs, MOSFETs datasheet and documents for FL06320G

FL06320G

Single FETs, MOSFETs Overview

The FL06320G is a Silicon Carbide (SiC) MOSFET from the Falcon Series by FastSiC Semiconductor Inc., housed in a PDFN 8x8 surface-mount package. It features a drain-source voltage rating of 750V and a typical on-state resistance of 320mΩ at VGS=15V. The device supports a continuous drain current of 8.8A at 25°C case temperature, with a maximum junction temperature of 175°C. Key electrical parameters include a total gate charge of 14.5nC and an output capacitive charge of 12.3nC. Thermal characteristics specify a junction-to-case thermal resistance of 3.65K/W.

Single FETs, MOSFETs Feature Summary

Clean Kelvin-Source switching configuration for optimized gate drive performance
High avalanche endurance capability for robust operation under stress
Low profile packaging designed to minimize parasitic inductance
Compatibility with standard 12V gate drivers

Single FETs, MOSFETs Applications

Switching mode power supplies
Power factor correction circuits
Telecom power systems
Renewable energy inverters
Class D amplifiers

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'G' corresponds to the PDFN 8x8 package variant when ordering. Confirm that the datasheet revision remains current as specifications are subject to change without notice. Ensure application conditions align with the recommended operating values provided in the official documentation.

Single FETs, MOSFETs Selection Notes

Select this component for high-frequency applications requiring low parasitic inductance and efficient thermal management. The clean Kelvin source connection simplifies driver design compared to traditional three-terminal packages. Consider the 175°C junction temperature rating for high-power density designs where ambient temperatures may be elevated.

Single FETs, MOSFETs Part Context

This part belongs to the Falcon Series of SiC MOSFETs manufactured by FastSiC Semiconductor Inc. The series includes variants with different package options, such as TO-252 and PQFN 5x6, all sharing similar core electrical characteristics. The FL06320G specifically utilizes the PDFN 8x8 footprint to balance thermal performance with compact board space requirements.

Single FETs, MOSFETs Replacement Considerations

Consult the manufacturer directly for comparable products or direct substitutes. Cross-referencing requires matching the 750V rating, 320mΩ RDS(on), and PDFN 8x8 package dimensions to ensure functional compatibility.