FMAM5119

Overview

The FMAM5119 is a high-power GaN RF amplifier manufactured by Fairview Microwave. It operates within the frequency range of 2 GHz to 4 GHz and delivers a nominal gain of 43 dB. The device achieves a saturated output power (Psat) of 20 Watts. It utilizes an SMA connector interface for signal transmission. This component is designed for applications requiring robust performance in the C-band spectrum.

Feature Summary

• Utilizes Gallium Nitride (GaN) technology for high power density
• Provides 43 dB gain across the 2 GHz to 4 GHz operating band
• Delivers 20 Watt saturated output power capability

Applications

• C-band communication systems
• High-power RF signal amplification
• Test and measurement equipment

Procurement Notes

Verify the specific datasheet version and electrical characteristics directly with Fairview Microwave or authorized distributors before procurement. Confirm that the SMA connector type matches the system requirements. Ensure thermal management solutions are adequate for the 20 Watt output power rating during operation.

Selection Notes

Select this amplifier when a wide bandwidth from 2 GHz to 4 GHz is required alongside high output power. The GaN technology offers advantages in efficiency and thermal handling compared to older technologies. Ensure the input drive levels are compatible with the 43 dB gain specification to avoid saturation issues.

Part Context

This part belongs to the Fairview Microwave RF Amplifier series, which includes various models optimized for different frequency bands and power levels. The FMAM5119 specifically targets the C-band market, complementing other models like the FMAM5079 and FMAM5115 which cover adjacent or broader frequency ranges.