FMAM5120

Overview

The FMAM5120 is a high-power GaN RF amplifier manufactured by Fairview Microwave. It operates within the frequency range of 2 GHz to 6 GHz and provides a nominal gain of 40 dB. The device features an output saturated power (Psat) of 10 Watts and utilizes an SMA connector interface.

Feature Summary

• Utilizes Gallium Nitride (GaN) technology for high-power performance
• Provides 40 dB gain across the 2 GHz to 6 GHz band
• Features an SMA connector interface

Applications

• RF signal amplification in wireless communication systems
• Test and measurement equipment requiring high-power amplification
• Broadband RF applications operating between 2 GHz and 6 GHz

Procurement Notes

Verify the specific datasheet version and manufacturer documentation for complete electrical characteristics, including noise figure, P1dB, and OIP3 values not listed in the summary. Confirm mechanical dimensions and thermal requirements for integration. Ensure SMA connector compatibility with system interfaces. Check current availability status as distribution may vary.

Selection Notes

Select this component when a 40 dB gain and 10 W Psat are required in the 2-6 GHz range. GaN technology offers robustness for high-power applications. Verify that the SMA interface meets system interconnect needs. Compare against other Fairview Microwave models like FMAM5115 or FMAM5104F if different frequency ranges or power levels are needed.

Part Context

Fairview Microwave specializes in RF and microwave components, including amplifiers and antennas. The FMAM5120 belongs to their line of high-power GaN amplifiers designed for demanding RF environments. This model complements other broadband amplifiers in their portfolio, targeting applications requiring significant power output in the UHF and S-band frequencies.