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The FMB200 is a PNP multi-chip general-purpose amplifier manufactured by onsemi. It is designed for applications requiring collector currents up to 300 mA. The device utilizes silicon technology and is housed in an SSOT-6 surface-mount package. Key electrical specifications include a maximum DC collector current of 500 mA, a collector-emitter voltage (VCEO) of 40 V, and a collector-base voltage (VCBO) of 75 V. The emitter-base voltage (VEBO) is rated at 5 V. Power dissipation reaches 700 mW, with a gain-bandwidth product (fT) of 300 MHz. The component operates within a temperature range of -55°C to +150°C.
Verify the specific manufacturer source when sourcing this component, as historical data indicates production by Fairchild Semiconductor prior to its acquisition by onsemi. Confirm RoHS compliance status and check for obsolete or end-of-life notices from authorized distributors. Ensure the SSOT-6 package variant matches the required footprint for PCB integration.
Select the FMB200 for designs requiring a PNP transistor with a 40 V collector-emitter rating and 500 mA continuous current capacity. The SSOT-6 package offers space efficiency compared to larger through-hole alternatives. Consider the 300 MHz transition frequency for moderate-speed switching or amplification tasks where low noise and high gain are necessary.
The FMB200 belongs to the family of multi-chip bipolar junction transistors (BJTs). It serves as the PNP counterpart to NPN devices like the FMB2222A. These components integrate multiple transistor structures into a single compact package to reduce board space while maintaining performance characteristics suitable for consumer electronics and industrial control systems.
Public confirmed substitute part numbers: FMB2907A.